Session Overview |
Tuesday, May 28 |
15:40 |
Ushering in New Peak Power and Pulse Width Frontiers using Bragg Lasers
* Amr S. Helmy, University of Toronto , Canada Bilal Janjua, University of Toronto In this talk, colliding-pulse mode-locked monolithic semiconductor lasers which are implemented for the first time in a Bragg waveguide laser (CPMBRL) is discussed. These devices show performance metrics that surpass all devices within their class including quantum dot and quantum dash lasers and structures having more complex multi-section, extended cavity, bandgap detuned SA and integrated chirped gratings. More specifically, improvements in the pulse width, spectral bandwidth and peak power are demonstrated. The distinguishing feature of this work is that it produced the shortest pulse reported to date from a diode laser, which had a pulse duration of ~130 fs @ 787 nm.. In this talk we also discuss how MQW-based multi-section passively Q-switched BRLs which are also mode-locking producing a pulse duration of ~250 fs @ 791 nm. Wide range of stable passively Q-switched operation has been achieved using a distributed Bragg reflection grating to align most effectively lasing wavelength with the saturable absorber absorption edge. Shortest reported 3dB RF linewidth for Q-switched operation in the range of 1.4 MHz-9.1 MHz showing stable Q-switched mode locking operation. Due to the reduction in the repetition rate brought about by the Q-switched operation, the devices exhibited record peak power of ~10 W @ 790 nm. Also, in this work an edge emitting photonic crystal surface emitting laser (EE-PCSEL) implemented for the first time in a BRL will be discussed. These devices demonstrate remarkable performance metrics that surpass others in their category while overcoming the inherent limitations of heterogeneous integration in more widely adopted platforms, such as periodically poled lithium niobate (PPLN), periodically poled potassium titanyl phosphate (PPKTP), beta barium borate (BBO), and silicon. |
16:05 |
Recent advances in High Power PCSELs
* Weidong Zhou, University of Texas at Arlington, United States of America Mingsen Pan, Semergytech, Inc. Chhabindra Gautam, University of Texas at Arlington We report here recent advances in high power semiconductor PCSEL technology. By optimizing the charge injection scheme, high modal properties can be achieved. Incorporating core/cladding photonic crystal cavity design, high speed and high power PCSELs were experimentally demonstrated, with potential applications for space. Additionally, taking advantage of the lateral mode coupling, coherent coupled PCSEL arrays were demonstrated also. All these advanced pay the way for the wide adaptations of PCSEL technology for applications in high brightness high power laser sources, high power high speed space communications, and power scaling with PCSEL array technology. |
16:30 |
Implementing advanced packaging schemes for enhanced optical coupling and nonlinear applications
* Samuel Serna, Bridgewater State University, United States of America This presentation introduces groundbreaking advancements in optical packaging, focusing on efficient optical coupling techniques that address the longstanding challenge of fiber-to-chip integration and chip-to-chip light coupling in photonic integrated circuits. Traditional coupling methods, such as edge and grating coupling, suffer from high insertion losses, limited operation bandwidth, and sensitivity to alignment, impeding cost-effective and scalable photonic applications. We propose innovative solutions through the development of free-form reflective micro-optics for fiber array coupling and novel vertical chip-to-chip couplers utilizing overlapping, inverse double tapers. Our free-form micro-optics design approach, streamlined to minimal full-wave simulations, achieves significant performance gains, including low coupling losses of less than 0.5 dB across a broad 300 nm bandwidth and robust alignment tolerance. Additionally, our vertical coupling strategy demonstrates exceptional insertion losses below 0.13 dB and wide alignment tolerances, proving its viability for dense, high-performance co-packaged optics in applications demanding beyond 50 Tbps data transmission. This work showcases the capacity to surpass existing optical communications constraints through broadband, high-tolerance solutions, underlining the transformative potential of these technologies in supporting robust and reliable nonlinear applications with some initial examples of the improvements to be presented. |
16:55 |
Advanced designs of optical antennas and optical phased arrays
* Jianhao Zhang, National Research Council Canada, Canada Pavel Cheben, National Research Council Canada, Canada Jens Schmid, National Research Council Canada, Canada Dan-Xia Xu, National Research Council Canada, Canada Optical phased arrays (OPAs) are among the key components in Light Detection and Ranging (LiDAR) and optical satellite communications. In this invited presentation, we will present our most recent results on the design of the optical antennas and two-dimensional OPAs. We will discuss our recent advances in enhancing the scalability and far-field performance of the two-dimensional OPAs. |
17:20 |
Fault-tolerant photonic quantum computing with GKP qubits
* Zachary Vernon, Xanadu Quantum Technologies Inc, Canada I will deliver an overview of Xanadu's photonic quantum computing architecture, and the role that photonic chip integration and corresponding fabrication process engineering plays in enabling its implementation. |
17:45 |
Monolithically Integrated III-Nitride DUV and Visible LEDs for Sterilization Technology
Yi Lu, King Abdullah University of Science and Technology, Saudi Arabia * Zhiyuan Liu, King Abdullah University of Science and Technology, Saudi Arabia Xiaohang Li, King Abdullah University of Science and Technology, Saudi Arabia Amid heightened demand for sterilization post-Covid-19, interest in deep ultraviolet (DUV) radiation has surged. To mitigate risks of DUV exposure, we explore the monolithic integration of DUV and visible (VIS) LEDs. Utilizing grading AlGaN, overflown electrons from DUV are intentionally introduced into VIS, enabling simultaneous DUV and VIS emitting. Results confirm the integration feasibility, boasting an EQE of 2.03% and WPE of 1.54% at 40 mA. This work establishes a framework to replace discrete DUV and VIS double-chip configurations in sterilization application. |