The oxide-confined vertical-cavity surface-emitting laser (VCSEL) is examined through simulation and analysis utilizing the Finite Difference Frequency Domain (FDFD) microcavity model available in the PICS3D simulation package. Using the full vectorial microcavity model enables an accurate analysis of both the dominant and higher order modes, therefore offering a comprehensive understanding of the impact of the optical cavity structural parameters. In this proceeding, the influence of oxide layer position and thickness on optical modes, lasing mode control and the threshold current are investigated. The simulated optimized oxide VCSEL demonstrates a threshold current of 0.7mA coupled with far-field divergent angle of almost 8°.

We introduce advancements in integrated photonic designs using a silica-on-silicon planar lightwave circuit platform. The platform exhibits ultra-low propagation losses, temperature-stable operation, and tight polarization control, allowing the realization of advanced architectures for optical communication, LiDAR and optical computing applications. Leveraging machine learning, we optimize design parameters on production masks to achieve performance uniformity. Furthermore, we use support vector machines to predict device performance on a wafer scale. These approaches accelerate photonic chip design and address challenges posed by fabrication variations, while fostering widespread adoption of photonic solutions in high-volume applications.

We present high-performance QDash lasers exhibiting stable mode-locking operations across an extensive temperature range from 15°C to 85°C. The observed fine-tuning of repetition frequency and narrow RF beating linewidths align effectively with temperature stability.

SiC and GaN as 2D materials as well as MoS2 as a TMDC semiconducting material was chosen, a Shottky-photodiode based SiC/MoS2 composite as well as GaN/MoS2 composite was fabricated, the resulted photodiode external quantum efficiency as well as internal quantum efficiency was compared to that of MoS2 based photodiode and consequently the time response was also compared.