Session Overview |
Thursday, May 30 |
13:00 |
Recent Progress of Electrically-Pumped AlGaN UV'A Lasers with Transparent Tunnel Junctions
* Shamsul Arafin, Ohio State University , United States of America Arnob Ghosh, Ohio State University Agnes M. D. M. Xavier, Ohio State University Sheikh Ifatur Rahman, Ohio State University Andrew Allerman, Sandia National Laboratories Siddharth Rajan, Ohio State University UV-A laser structures are designed and grown on AlGaN and GaN templates using molecular beam epitaxy. Devices fabricated from these structures are characterized to evaluate their electrical and optical properties. Additionally, a two-step process integrating dry and wet etching techniques has been successfully implemented, resulting in the attainment of smooth and vertically aligned facets within the AlGaN/GaN structures. |
13:25 |
Towards photonic integrated circuits built on GaN platform
* Piotr Perlin, Institute of High-Pressure Physics, Polish Academy of Science, Poland The rapid development of Photonic Integrated Circuits (PICs) accompanies the broader and broader use of such systems in optoelectronics, primarily in telecommunications, where Wavelength Division Multiplexing (WDM) serves as a good example. Although, up to now, the majority of PICs operate within the IR part of the spectrum, there is a growing interest in the visible and possibly also UV range devices. This spectral range, from the point of view of light sources, can be uniquely served by InAlGaN laser diodes. These laser sources can be integrated into standard SOI-based Photonic Integrated Circuits, although it requires a great deal of precision in coupling laser diodes to the waveguides processed on the PIC’s wafer. In this presentation, I will focus on PICs fabricated on GaN wafers, which enable a robust integration of light sources with the whole circuit. I will present two examples of integration: the first being a horizontal to vertical array of laser diodes, and the second example will be the fabrication of sets of laser diodes coupled to the waveguide. These waveguides are fabricated in the same growth run as laser diodes, but thanks to substrate patterning methods, they are characterized by much lower absorption losses, enabling laser light propagation. |
14:00 |
TBC
* Xiaohang Li, KAUST, Saudi Arabia TBC |
14:25 |
Physical processes leading to the degradation of UV-C LEDs and their modeling by defect reactions and numerical simulations
* Carlo De Santi, University of Padova, Italy Matteo Buffolo, University of Padova Francesco Piva, University of Padova Nicola Roccato, University of Padova Nicola Trivellin, University of Padova Gaudenzio Meneghesso, University of Padova Enrico Zanoni, University of Padova Matteo Meneghini, University of Padova This work reviews recent studies describing degradation phenomena in UV-C LEDs, including the effect of charged defects causing variation in injection efficiency, de-hydrogenation of vacancies, magnesium compensation, and the use of numerical simulations to confirm the degradation models. |